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Wynik wyszukiwania

1/33
Nr opisu: 0000004359
Computer analysis of the Fermi level behaviour at SiO2/n-Si and SiO2/n-GaAs interfaces.
[Aut.]: Bogusława Adamowicz, Marcin** Miczek, H. Hasegawa.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 249-252, bibliogr. 16 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

2/33
Nr opisu: 0000004347
Electronic properties of space charge layer of copper phthalocyanine (CuPc) thin films in situ studied by photoemission yield spectroscopy.
[Aut.]: Lucyna Grządziel, Krzysztof* Mikołajczak, Jacek** Szuber.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 157-160, bibliogr. 26 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

3/33
Nr opisu: 0000004356
Humidity sensing properties of spin-on phosphorosilica thin films.
[Aut.]: Krzysztof** Waczyński, Edyta Wróbel, Zbigniew** Pruszowski, R. Nowak.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 217-221, bibliogr. 18 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

4/33
Nr opisu: 0000004374
Influence of electron states parameters on results of SSPG measurements.
[Aut.]: Marian Nowak, Anna Starczewska.
W: Surface and thin film structures'1999. Proceedings of the 7th seminar on surface and thin film structures, Kazimierz Dolny, Poland, September 15-18, 1999. Ed. by M. Jałochowski. Warszawa : Institute of Electron Technology, 2000, s. 412-415, bibliogr. 25 poz. (Electron Technology ; vol. 33, no. 3 0070-9816)

5/33
Nr opisu: 0000004363
Photoemission studies of the electronic properties of the space charge layer of SnO2(110) surface.
[Aut.]: Jacek** Szuber, W. Gopel.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 261-281, bibliogr. 69 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

6/33
Nr opisu: 0000004371
Simple, low cost quartz crystal monitor system for metal phthalocyanine thin films growth control.
[Aut.]: Piotr* Matkowski, Lucyna Grządziel, Jacek** Szuber.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 297-301, bibliogr. 16 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

7/33
Nr opisu: 0000004366
Some comments on the band bending and origin of electronic defect states on the clean SnO2(110).
[Aut.]: Dominika* Lipa, Jacek** Szuber.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 282-285, bibliogr. 23 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

8/33
Nr opisu: 0000004353
Studies of the electrical and mass effects in surface acoustic wave gas sensor.
[Aut.]: Marian** Urbańczyk, Wiesław Jakubik.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 161-166, bibliogr. 11 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

9/33
Nr opisu: 0000004368
Surface photovoltage spectroscopy system for in situ studies of metal phthalocyanine thin films.
[Aut.]: Marek* Bilski, S. Kaszczyszyn, Lucyna Grządziel, Bogusława Adamowicz, Jacek** Szuber.
W: Semiconductor gas sensors - SGS'98. Proceedings of the 1st International Seminar on Semiconductor Gas Sensors, Ustroń, Poland, September 22-25, 1998. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 2000, s. 289-291, bibliogr. 19 poz. (Electron Technology ; vol. 33, no. 1/2 0070-9816)

10/33
Nr opisu: 0000025030
An UHV experimental system for in situ determination of the electronic properties of metal phthalocyanine thin films by photoemission yield spectroscopy.
[Aut.]: Lucyna Grządziel, Jacek** Szuber.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 502-504, bibliogr. 15 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

11/33
Nr opisu: 0000025761
Application of the unipole mass filter (UMF) for determination of partial pressuress of gases with near atomic masses.
[Aut.]: Aleksander Król, Jacek** Szuber, S. Kaszczyszyn.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 505-507, bibliogr. 5 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

12/33
Nr opisu: 0000025768
Atomic hydrogen gun for cleaning of GaAs surface.
[Aut.]: Adam* Girycki, Jacek** Szuber.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 495-498, bibliogr. 15 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

13/33
Nr opisu: 0000025890
Determining of diffusion length of carries in thin films of α-Si:H using SSPG technique.
[Aut.]: Marian Nowak, Anna Starczewska.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 420-424, bibliogr. 12 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

14/33
Nr opisu: 0000026003
Examination of physical and chemical properties of thin layers of arsenic-silicon glasses by means of an X-ray microprobe.
[Aut.]: Krzysztof** Waczyński, Edyta Wróbel, Zbigniew** Pruszowski, Michał** Żelechower.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 468-471, bibliogr. 4 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

15/33
Nr opisu: 0000026041
Influence of insulator-semiconductor interface parameters and bulk parameters on frequency dependence of GaAs MIS conductance.
[Aut.]: Stanisław** Kochowski.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 346-350, bibliogr. 9 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

16/33
Nr opisu: 0000026158
Investigations of α-Si thin film using new technique of variable angle reflectometry (VAR).
[Aut.]: Janusz* Jaglarz, Marian Nowak.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 405-408, bibliogr. 8 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

17/33
Nr opisu: 0000027875
Investigations of layered semiconductors using photoreflectance.
[Aut.]: Mirosława Kępińska, Marian Nowak, Ewa** Wilk.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 342-345, bibliogr. 11 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

18/33
Nr opisu: 0000026188
Optical and photoelectrical investigations of Ge20Se69Bi11 thin films.
[Aut.]: Mirosława Kępińska, Marian Nowak, S. Okuniewicz, Barbara Solecka.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 417-419, bibliogr. 9 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

19/33
Nr opisu: 0000026187
Optical properties of magnetron sputtered α-Si:H treated with a CO2 laser.
[Aut.]: Andrzej Grabowski, Marian Nowak.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 401-404, bibliogr. 10 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

20/33
Nr opisu: 0000026019
Some optical properties of amorphous In-Se thin films.
[Aut.]: A. Michalewicz, B. Jarząbek, Jan* Cisowski, J. Jurasik, A. Burian, J. Weszka.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 411-416, bibliogr. 15 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

21/33
Nr opisu: 0000026061
Sulfide passivation of GaAs surface.
[Aut.]: Jacek** Szuber, G. Hollinger, E. Bergignat.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 328-337, bibliogr. 58 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

22/33
Nr opisu: 0000026222
Surface and thin film structures 1997. Proceedings of the 5th Seminar on Surface and Thin Film Structures, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber.
Warszawa : Institute of Electron Technology, 1998
(Electron Technology ; vol. 31, no. 3/4 0070-9816)

23/33
Nr opisu: 0000026115
The influence of heating of silicon glasses and anodic oxides on their electrophysical properties.
[Aut.]: Stanisław* Łoś, Krzysztof** Waczyński, Edyta Wróbel.
W: Surface and thin film structures 1997. Proceedings of the 5th seminar, Ustroń, Poland, September 23-26, 1997. Ed. by J. Szuber. Warszawa : Institute of Electron Technology, 1998, s. 450-454, bibliogr. 9 poz. (Electron Technology ; vol. 31, no. 3/4 0070-9816)

24/33
Nr opisu: 0000028066
ADIRR investigations of temperature dependence of optical properties of alpha-Si.
[Aut.]: Janusz* Jaglarz, Marian Nowak.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 213-215, bibliogr. 7 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

25/33
Nr opisu: 0000028065
Analysis of MIS GaAs capacitance versus frequency data using least-squares method.
[Aut.]: Stanisław** Kochowski, Marian Nowak.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 109-112, bibliogr. 12 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

26/33
Nr opisu: 0000028072
Determination of density of states in -Si:H,F thin films using spectral, temperature and illumination intensity dependencies of photoconductivity.
[Aut.]: Marian Nowak.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 222-224, bibliogr. 7 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

27/33
Nr opisu: 0000028071
Diffusion from spin-on glasses.
[Aut.]: Krzysztof** Waczyński, Edyta Wróbel, Zbigniew** Pruszowski.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 138-141, bibliogr. 9 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

28/33
Nr opisu: 0000028070
Evaluation of the usefulness of silica glass for the production of MIS structures with a double dielectric layer.
[Aut.]: Stanisław* Łoś, Krzysztof** Waczyński.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 142-144, bibliogr. 8 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

29/33
Nr opisu: 0000028069
Influence of CO2 laser annealing on optoelectronical parameters of alfa-Si:H.
[Aut.]: Andrzej Grabowski, Marian Nowak.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 145-148, bibliogr. 11 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

30/33
Nr opisu: 0000027768
Influence of spatial distribution of radiation on photoconductivity and photoelectromagnetic effect in a thin semiconductor film.
[Aut.]: Marian Nowak.
W: Surface and thin film structures 1996. Proceedings of the 4th Seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. by M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 216-221, bibliogr. 34 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

31/33
Nr opisu: 0000028068
Inhomogeneity of amorphous Zn-P thin films from optical measurements.
[Aut.]: B. Jarzabek, J. Weszka, J. Jurusik, Jan* Cisowski.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 193-195, bibliogr. 10 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

32/33
Nr opisu: 0000028067
Semiconductor gas sensors.
[Aut.]: Jacek** Szuber.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 125-133, bibliogr. 35 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

33/33
Nr opisu: 0000027770
Some comments on the electronic properties of the space charge layer of the clean and oxygen exposed SnO2(110) surface.
[Aut.]: Dominika* Lipa, Jacek** Szuber.
W: Surface and thin film structures 1996. Proceedings of the 4th seminar, Kazimierz Dolny, Poland, September 18-21, 1996. Ed. M. Jałochowski. Warszawa : Institute of Electron Technology, 1997, s. 202-204, bibliogr. 7 poz. (Electron Technology ; vol. 30, no. 2 0070-9816)

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